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 Agilent MGA-71543 Low Noise Amplifier with Mitigated Bypass Switch
Data Sheet
Features * Lead-free Option Available * Operating frequency: 0.1 GHz ~ 6.0 GHz * Noise figure: 0.8 dB (NFmin) * Gain: 16 dB * Average Idd = 2mA in CDMA handset * Bypass switch on chip Loss = -5.6 dB (Id < 5 A) IIP3 = +35 dBm * Adjustable input IP3: 0 to +9 dBm * 2.7 V to 4.2 V operation Applications * CDMA (IS-95, J-STD-008) Receiver LNA * Transmit Driver Amp * W-CDMA Receiver LNA * TDMA (IS-136) handsets Surface Mount Package SOT-343/4-lead SC70
Description Agilent's MGA-71543 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for adaptive CDMA and W-CDMA receiver systems. The MGA-71543 is part of the Agilent Technologies complete CDMAdvantage RF chipset. The MGA-71543 features a minimum noise figure of 0.8 dB and 16 dB available gain from a single stage, feedback FET amplifier. The input and output are partially matched, and only a simple series/shunt inductor match is required to achieve low noise figure and VSWR into 50. When set into the bypass mode, both input and output are internally matched through a mitigative circuit. This circuit draws no current, yet duplicates the in and out impedance of the LNA. This allows the system user to have minimum mismatch change from LNA to bypass mode, which is very important when the MGA-71543 is used between duplexers and/or filters. The MGA-71543 offers an integrated solution of LNA with adjustable IIP3. The IIP3 can be fixed to a desired current level for the receiver's linearity requirements.
The LNA has a bypass switch function, which provides low insertion loss at zero current. The bypass mode also boosts dynamic range when high level signal is being received. The MGA-71543 is designed for CDMA and W-CDMA receiver systems. The IP3, Gain, and mitigative network are tailored to these applications where filters are used. Many CDMA systems operate 20% LNA mode, 80% bypass. With the bypass current draw of zero and LNA of 10 mA, the MGA-71543 allows an average 2 mA current. The MGA-71543 is a GaAs MMIC, processed on Agilent's cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
Pin Connections and Package Marking
3 INPUT & Vref 4 1 RF Gnd & Vs 2 OUTPUT & Vd
71x
RF Gnd & Vs
Functional Block Diagram
Simplified Schematic
Evaluation Test Circuit (single positive bias)
Input 1.5 nH
+ -
+ - Control
71
RF IN
RF OUT
Input & Vref
2.7 nH
Output & Vd
Output
Gain FET
Rbias Vd
RF Gnd & Vs
Switch & Bias
RF Gnd
control
MGA-71543 Absolute Maximum Ratings [1] Symbol
Vd Vc Id Pd Pin Tj TSTG
Parameter
Maximum Input to Output Voltage [4] Maximum Input to Ground DC Voltage [4] Supply Current Power Dissipation [2] CW RF Input Power Junction Temperature Storage Temperature
Units
V V mA mW dBm C C
Absolute Maximum
5.5 +.3 -5.5 60 240 +15 170 -65 to +150
Operation Maximum
4.2 +.1 -4.2 50 200 +10 150 -40 to +85
Thermal Resistance: [2, 3]
jc = 240C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Ground lead temperature at 25C. 3. Thermal resistance measured by 150C Liquid Crystal Measurement method. 4. Maximum rating assumes other parameters are at DC quiescent conditions.
Product Consistency Distribution Charts [5,6]
150 Cpk = 2.00 Std = 0.24 150 Cpk = 1.16 Std = 0.96
150
Cpk = 2.33 Std = 0.02
120
120
120
FREQUENCY
FREQUENCY
FREQUENCY
90
-3 Std
+3 Std
90
-3 Std
+3 Std
90
-3 Std
+3 Std
60
60
60
30
30
30
0 14.4
0 15.4 GAIN (dB) 16.4 17.4 1 2 3 4 5 6 7 8 IIP3 (dBm)
0 0.85
0.95
1.05
1.15 NF (dB)
1.25
1.35
1.45
Figure 1. Gain @ 2 GHz, 3V, 10 mA. LSL = 14.4, Nominal = 15.9, USL = 17.4
Figure 2. IIP3 @ 2 GHz, 3V, 10 mA. LSL = 1.0, Nominal = 3.0, USL = 8.0
Figure 3. NF @ 2 GHz, 3V, 10 mA. LSL = 0.85, Nominal = 1.08, USL = 1.45
Notes: 5. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower specification limits. 6. Measurements made on production test board, Figure 4. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements at 10 mA bias current.
Excess circuit losses have been deembedded from actual measurements. Performance may be optimized for different bias conditions and applications. Consult Application Note for details.
2
MGA-71543 Electrical Specifications Tc = +25C, Zo = 50, Id = 10 mA, Vd = 3V, unless noted Symbol
Vref test NF test Gain test IIP3 test Gain, Bypass Ig test NFmin [3]
Parameter and Test Condition
Vds = 2.4 V f = 2.01 GHz f = 2.01 GHz f = 2.01 GHz Vd = 3.0 V (= Vds - Vref) Vd = 3.0 V (= Vds - Vref) Vd = 3.0 V (= Vds - Vref) Id = 10 mA Id = 10 mA Id = 10 mA Id = 10 mA Id = 0 mA Id = 0 mA f = 0.9 GHz f = 1.5 GHz f = 1.9 GHz f = 2.1 GHz f = 2.5 GHz f = 6.0 GHz f = 0.9 GHz f = 1.5 GHz f = 1.9 GHz f = 2.1 GHz f = 2.5 GHz f = 6.0 GHz Id = 6 mA Id = 10 mA Id = 20 mA Id = 40 mA Id = 6 mA Id = 10 mA Id = 20 mA Id = 40 mA Intrinsic Eval Circuit f = 2.01 GHz f = 2.01 GHz f = 2.01 GHz
Units
V dB dB dBm dB A dB
Min.
-0.86
Typ.
-0.65 1.1
Max.
-0.43 1.45 17.4
[1]
0.041 0.02 0.24 0.96 0.12 1.5
14.4 1 -6.4
15.9 3.0 -5.6 2.0 0.7 0.7 0.8 0.8 0.8 1.1 17.1 16.4 15.8 15.4 14.9 10.0 +3.0 +7.4 +13.1 +15.5 -0.5 +3.0 +7.4 +8.7 10 100 6.0 10.9 -22.5
f = 2.01 GHz Vds = 0 V, Vref = -3V Bypass Mode[6] Bypass Mode Vds = 0 V, Vref = -3 V[6] Minimum Noise Figure As measured in Figure 5 Test Circuit (opt computed from s-parameter and noise parameter performance as measured in a 50 impedance fixture) Associated Gain at Nfo As measured in Figure 5 Test Circuit (Gopt computed from s-parameter and noise parameter performance as measured in a 50 impedance fixture) Output Power at 1 dB Gain Compression As measured in Evaluation Test Circuit with source resistor biasing [4,5] Frequency = 2.01 GHz Input Third Order Intercept Point As measured in Figure 4 Test Circuit [5] Frequencies = 2.01 GHz, 2.02 GHz Bypass Switch Rise/Fall Time (10% - 90%) As measured in Evaluation Test Circuit Input Return Loss as measured in Fig. 4 Output Return Loss as measured in Fig. 4 Isolation |s12|2 as measured in Fig. 5
Ga[3]
dB
P1dB
dBm
IIP3
dBm
Switch
nS dB dB dB
RLin RLout ISOL
0.31 0.65
Notes: 1. Standard Deviation and Typical Data based at least 450 part sample size from 9 wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 2. Measurements made on a fixed tuned production test circuit (Figure 4) that represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test board requirements at 10 mA bias current. Excess circuit losses have been de-embedded from actual measurements. Vd=Vds-Vref where Vds is adjusted to maintain a constant Vd bias equivalent to a single supply 3V bias application. Consult Applications Note for circuit biasing options. 3. Minimum Noise Figure and Associated Gain data computed from s-parameter and noise parameter data measured in a 50 system using ATN NP5 test system. Data based on 10 typical parts from 9 wafers. Associated Gain is the gain when the product input is matched for minimum Noise Figure. 4. P1dB measurements were performed in the evaluation circuit with source resistance biasing. As P1dB is approached, the drain current is maintained near the quiescent value by the feedback effect of the source resistor in the evaluation circuit. Consult Applications Note for circuit biasing options. 5. Measurements made on a fixed tuned production test circuit that represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test board requirements at 10 mA bias current. Performance may be optimized for different bias conditions and applications. Consult Applications Note. 6. The Bypass Mode test conditions are required only for the production test circuit (Figure 4) using the gate bias method. In the preferred source resistor bias configuration, the Bypass Mode is engaged by presenting a DC open circuit instead of the bias resistor on Pin 4.
3
MGA-71543 Typical Performance Tc = 25C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system and was optimized for each frequency with external tuners.
960 pF RF Input 56 pF 1.5 nH Vref 2.7 nH 4 3 Vds 56 pF 1 2 RF Output 56 pF
RF Input
Bias Tee
Test Fixture Bias Tee
Vds
71
Vref
RF Output
Figure 4. MGA-71543 Production Test Circuit.
71
3.9 nH
Figure 5. MGA-71543 Test Circuit for S, Noise, and Power Parameters over Frequency.
20 18 15
1.5
ASSOCIATED GAIN (dB)
1.3
17
NOISE FIGURE (dB)
1.1
14
INPUT IP3 (dBm)
12 9 6 3
0.9
11
0.7
2.7V 3.0V 3.3V
8
2.7V 3.0V 3.3V
0 -3
2.7V 3.0V 3.3V
0.5 0 1 2 3 4 5 6 FREQUENCY (GHz)
5 0 1 2 3 4 5 6 FREQUENCY (GHz)
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 6. Minimum Noise Figure vs. Frequency and Voltage.
20
-40C +25C +85C
Figure 7. Associated Gain with Fmin vs. Frequency and Voltage.
18 15
Figure 8. Input Third Order Intercept Point vs. Frequency and Voltage.
ASSOCIATED GAIN (dB)
17
INPUT IP3 (dBm)
12 m3 9 6 m2 3
-40C +25C +85C
14
11
8 0 5 0 1 2 3 4 5 6 FREQUENCY (GHz) -3 0 1 2 3 4
m1
5
6 500 MHz to 6 GHz
FREQUENCY (GHz)
Figure 9. Associated Gain with Fmin vs. Frequency.
Figure 10. Input Third Order Intercept Point vs. Frequency and Temperature.
0
Figure 11. S11 Impedance vs. Frequency. (m1 = Sw, m2 = 6 mA, m3 = 10 mA)
18 15
-2
INSERTION LOSS (dB)
12 -4
OP1dB (dBm)
9 6 3
m3 m2 m1
-6
-8
Gass w/Fmin Minimum
0 -3
2.7V 3.0V 3.3V
-10 0 500 MHz to 6 GHz 1 2 3 4 5 6 FREQUENCY (GHz)
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 12. S22 Impedance vs. Frequency. (m1 = Sw, m2 = 6 mA, m3 = 10 mA)
4
Figure 13. Bypass Mode Associated Insertion Loss with Fmin Match and Minimum Loss vs. Frequency.
Figure 14. Output Power at 1 dB Compression vs. Frequency and Voltage. [4]
MGA-71543 Typical Performance, continued Tc = 25C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system and was optimized for each frequency with external tuners.
18 15 18 15 12 18 15 12
INPUT IP3 (dBm)
12
OP1dB (dBm)
9 6 3 0 -3 0 1 2 3 4 5 6 FREQUENCY (GHz)
6 mA 10 mA 20 mA
9 -6 3 0 -3 0 10 20 Idsq CURRENT (mA) 30 40
-40C +25C +85C
OP1dB (dBm)
9 6 3 0 -3 0 10 20 Id CURRENT (mA) 30 40
-40C +25C +85C
Figure 15. Input Third Order Intercept Point vs. Frequency and Current.
2.2 2.0 1.8 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 Id CURRENT (mA) 30 40 1.4
Figure 16. Output Power at 1 dB Compression vs. Idsq Current and Temperature (Passive Bias, Vref Fixed) [4].
20 17 14
Figure 17. Output Power at 1 dB Compression vs. Current and Temperature (Source Resistor Bias in Evaluation Circuit) [5].
12
9
INPUT IP3 (dBm)
-40C +25C +85C
GAIN (dB)
NF (dB)
6
11 8 5 2 0 10 20 Id CURRENT (mA) 30 40
3
-40C +25C +85C
0
-3 0 10 20 Id CURRENT (mA) 30 40
Figure 18. Minimum Noise Figure vs. Current (2 GHz).
1.0
Figure 19. Gain vs. Current and Temperature (2 GHz).
Figure 20. Input Third Intercept Point vs. Current and Temperature (2 GHz).
0.8
Vs (V)
0.6
0.4
0.2
0 0 10 20 Id CURRENT (mA) 30 40
Figure 21. Control Voltage vs. Current.
Notes: 4. P1dB measurements were performed with passive biasing in Production Test Circuit (Figure 4.). Quiescent drain current, Idsq, is set by a fixed Vref with no RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and DC bias point which typically
results in higher P1dB than if the drain current is maintained constant by active biasing. 5. P1dB measurements were performed in Evaluation Test Circuit with source resistor biasing which maintains the drain current near the quiescent value under large signal conditions.
5
MGA-71543 Typical Scattering Parameters TC = 25C, Vds = 0V, Vref = -3.0V, Id = 0 mA (bypass mode), ZO = 50 Freq (GHz)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.968 0.961 0.951 0.947 0.937 0.929 0.921 0.913 0.905 0.895 0.887 0.878 0.869 0.862 0.854 0.847 0.839 0.832 0.825 0.819 0.812 0.806 0.8 0.792 0.787 0.76 0.74 0.721 0.708 0.7 0.7 0.699 0.705 0.708 0.705 0.728 0.781 0.815 0.838 0.847 0.85 0.856 0.848 0.844 0.873
S11 Ang.
-4.5 -8.4 -11.4 -14.8 -18.1 -21.3 -24.5 -27.7 -30.8 -33.7 -36.6 -39.4 -42.1 -44.7 -47.3 -49.8 -52.4 -54.8 -57.1 -59.5 -61.7 -63.9 -66.3 -68.5 -70.9 -81.8 -93.4 -106 -119.8 -134.7 -150.2 -165.1 179.7 165.3 136.3 106.4 75 48.9 28.2 8.5 -10.6 -28.5 -43.4 -53.9 -65.2
S21 Mag.
0.021 0.039 0.065 0.09 0.114 0.136 0.157 0.176 0.194 0.211 0.226 0.239 0.252 0.264 0.274 0.283 0.293 0.3 0.308 0.314 0.321 0.326 0.331 0.336 0.341 0.359 0.371 0.377 0.379 0.374 0.362 0.347 0.328 0.307 0.262 0.202 0.141 0.083 0.034 0.005 0.037 0.058 0.072 0.083 0.088
S21 Ang.
41.1 70.5 73.7 70.9 65.7 61.4 57 52.7 48.6 44.5 40.6 36.8 33.2 29.7 26.3 23.1 19.9 16.8 13.8 11 8.1 5.3 2.6 0 -2.7 -15.1 -27.1 -39.1 -51 -63.2 -75.2 -86.7 -98.1 -109.4 -133.2 -157.3 179.6 156.7 134.9 -22.1 -73.5 -94 -112.3 -127.4 -145.2
S12 Mag.
0.021 0.039 0.064 0.09 0.114 0.136 0.157 0.176 0.194 0.211 0.226 0.239 0.252 0.263 0.274 0.283 0.292 0.3 0.307 0.314 0.32 0.326 0.331 0.336 0.34 0.358 0.37 0.377 0.378 0.374 0.362 0.347 0.328 0.307 0.262 0.201 0.141 0.083 0.034 0.005 0.036 0.057 0.072 0.083 0.088
S12 Ang.
41.3 70.8 73.9 71 65.9 61.5 57.1 52.8 48.7 44.6 40.6 36.9 33.3 29.8 26.4 23.2 20 16.9 14 11.1 8.2 5.4 2.7 0.1 -2.5 -15 -27 -39 -50.9 -63 -75.1 -86.5 -98 -109.4 -133.1 -157.2 179.8 156.8 135.6 -19.9 -73.5 -94.1 -112.2 -127.3 -144.4
S22 Mag.
0.936 0.916 0.901 0.89 0.871 0.861 0.846 0.833 0.82 0.806 0.791 0.776 0.762 0.748 0.732 0.719 0.705 0.692 0.679 0.665 0.653 0.639 0.627 0.616 0.603 0.548 0.497 0.452 0.418 0.393 0.376 0.361 0.35 0.336 0.292 0.242 0.247 0.306 0.367 0.414 0.478 0.555 0.626 0.669 0.706
S22 Ang.
-5.9 -9.5 -13.1 -16.5 -20.2 -23.7 -27.1 -30.3 -33.3 -36.3 -39.2 -41.9 -44.4 -46.9 -49.2 -51.4 -53.5 -55.5 -57.6 -59.4 -61.2 -63 -64.6 -66.3 -67.8 -75.5 -83.4 -91.6 -100.7 -110.7 -121.1 -130.9 -141.7 -152 -173.9 156.3 114.9 80.3 54.2 29.4 4.7 -15.7 -30.1 -44 -58.7
S21 (dB)
-33.6 -28.2 -23.7 -20.9 -18.9 -17.3 -16.1 -15.1 -14.2 -13.5 -12.9 -12.4 -12.0 -11.6 -11.2 -11.0 -10.7 -10.5 -10.2 -10.1 -9.9 -9.7 -9.6 -9.5 -9.3 -8.9 -8.6 -8.5 -8.4 -8.5 -8.8 -9.2 -9.7 -10.3 -11.6 -13.9 -17.0 -21.6 -29.4 -46.0 -28.6 -24.7 -22.9 -21.6 -21.1
Gmax (dB)
-12.5 -9.1 -6.3 -4.2 -3.6 -2.8 -2.4 -2.2 -2.0 -1.9 -1.9 -2.0 -2.1 -2.1 -2.2 -2.3 -2.4 -2.5 -2.6 -2.7 -2.8 -2.9 -3.0 -3.1 -3.2 -3.6 -3.9 -4.3 -4.6 -4.9 -5.2 -5.7 -6.1 -6.7 -8.3 -10.4 -12.7 -16.5 -23.5 -39.7 -21.9 -17.4 -15.2 -13.6 -11.9
RLin RLout Isolation (dB) (dB) (dB)
-0.3 -0.3 -0.4 -0.5 -0.6 -0.6 -0.7 -0.8 -0.9 -1.0 -1.0 -1.1 -1.2 -1.3 -1.4 -1.4 -1.5 -1.6 -1.7 -1.7 -1.8 -1.9 -1.9 -2.0 -2.1 -2.4 -2.6 -2.8 -3.0 -3.1 -3.1 -3.1 -3.0 -3.0 -3.0 -2.8 -2.1 -1.8 -1.5 -1.4 -1.4 -1.4 -1.4 -1.5 -1.2 -0.6 -0.8 -0.9 -1.0 -1.2 -1.3 -1.5 -1.6 -1.7 -1.9 -2.0 -2.2 -2.4 -2.5 -2.7 -2.9 -3.0 -3.2 -3.4 -3.5 -3.7 -3.9 -4.1 -4.2 -4.4 -5.2 -6.1 -6.9 -7.6 -8.1 -8.5 -8.8 -9.1 -9.5 -10.7 -12.3 -12.1 -10.3 -8.7 -7.7 -6.4 -5.1 -4.1 -3.5 -3.0 -33.6 -28.2 -23.9 -20.9 -18.9 -17.3 -16.1 -15.1 -14.2 -13.5 -12.9 -12.4 -12.0 -11.6 -11.2 -11.0 -10.7 -10.5 -10.3 -10.1 -9.9 -9.7 -9.6 -9.5 -9.4 -8.9 -8.6 -8.5 -8.5 -8.5 -8.8 -9.2 -9.7 -10.3 -11.6 -13.9 -17.0 -21.6 -29.4 -46.0 -28.9 -24.9 -22.9 -21.6 -21.1
6
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25C, Vds = 2.25 V, Vref = -0.77 V, Id = 3 mA, ZO = 50 Freq (GHz)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.927 0.921 0.915 0.909 0.899 0.891 0.883 0.873 0.863 0.858 0.852 0.846 0.841 0.833 0.828 0.794 0.758 0.717 0.679 0.644 0.594 0.565 0.536 0.545 0.608 0.665 0.707 0.735 0.76 0.788 0.802 0.808 0.845
S11 Ang.
-10.1 -16.4 -22.7 -28.8 -34.8 -40.5 -46.2 -51.7 -57 -59.7 -62.3 -64.8 -67.5 -70 -72.8 -85.6 -99.1 -113.5 -129 -145.1 -176.1 155 127 99.4 70.4 46.2 27.2 8.7 -9.7 -27.4 -42.4 -53.1 -64.7
S21 Mag.
2.945 2.939 2.907 2.871 2.826 2.783 2.728 2.693 2.652 2.63 2.609 2.593 2.579 2.554 2.544 2.479 2.43 2.373 2.323 2.252 2.073 1.885 1.715 1.611 1.503 1.332 1.167 1.03 0.904 0.757 0.609 0.5 0.429
S21 Ang.
170.7 164.1 158.3 152.6 147 141.5 136.3 131.1 126.1 123.7 121.2 118.7 116.3 113.9 111.5 99.7 87.7 75.6 63.1 50.5 26.9 4.6 -16.6 -37 -59.7 -82 -101.9 -121.7 -142.2 -162.1 180 165.7 150.7
S12 Mag.
0.028 0.032 0.039 0.047 0.054 0.062 0.069 0.076 0.082 0.086 0.089 0.092 0.095 0.098 0.1 0.114 0.125 0.134 0.141 0.144 0.143 0.138 0.126 0.117 0.12 0.12 0.119 0.12 0.122 0.118 0.115 0.113 0.11
S12 Ang.
23.9 32.9 38.7 41.3 41.5 40.5 38.8 36.7 34.3 33 31.7 30.4 28.9 27.5 26.1 18.5 10.7 2.1 -6.4 -15.4 -31 -45.3 -58.8 -63.7 -71.8 -81.5 -90 -99.8 -110.9 -122.8 -134.2 -144.3 -157.8
S22 Mag.
0.754 0.744 0.742 0.74 0.736 0.732 0.727 0.721 0.716 0.711 0.707 0.703 0.698 0.695 0.689 0.66 0.626 0.587 0.549 0.511 0.454 0.408 0.344 0.281 0.254 0.274 0.317 0.356 0.421 0.511 0.6 0.653 0.699
S22 Ang.
-7.9 -12.6 -17.5 -22.1 -26.7 -30.9 -34.9 -38.7 -42.5 -44.2 -46 -47.9 -49.5 -51.3 -52.9 -61.6 -70.5 -80 -90.3 -100.9 -120.8 -140.1 -157.3 -177.8 145.5 106.1 75.4 47.9 20.1 -4.1 -21.1 -36.7 -52.6
S21 (dB)
9.4 9.4 9.3 9.2 9.0 8.9 8.7 8.6 8.5 8.4 8.3 8.3 8.2 8.1 8.1 7.9 7.7 7.5 7.3 7.1 6.3 5.5 4.7 4.1 3.5 2.5 1.3 0.3 -0.9 -2.4 -4.3 -6.0 -7.4
Gmax (dB)
21.6 21.1 20.6 20.2 19.6 19.1 18.6 18.0 17.5 17.2 17.0 16.7 16.5 16.2 15.9 14.7 13.6 12.5 11.6 10.7 9.2 8.0 6.7 6.0 5.8 5.4 4.8 4.2 3.7 3.1 2.1 1.0 1.0
RLin RLout Isolation (dB) (dB) (dB)
-0.7 -0.7 -0.8 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.3 -1.4 -1.5 -1.5 -1.6 -1.6 -2.0 -2.4 -2.9 -3.4 -3.8 -4.5 -5.0 -5.4 -5.3 -4.3 -3.5 -3.0 -2.7 -2.4 -2.1 -1.9 -1.9 -1.5 -2.5 -2.6 -2.6 -2.6 -2.7 -2.7 -2.8 -2.8 -2.9 -3.0 -3.0 -3.1 -3.1 -3.2 -3.2 -3.6 -4.1 -4.6 -5.2 -5.8 -6.9 -7.8 -9.3 -11.0 -11.9 -11.2 -10.0 -9.0 -7.5 -5.8 -4.4 -3.7 -3.1 -31.1 -29.9 -28.2 -26.6 -25.4 -24.2 -23.2 -22.4 -21.7 -21.3 -21.0 -20.7 -20.4 -20.2 -20.0 -18.9 -18.1 -17.5 -17.0 -16.8 -16.9 -17.2 -18.0 -18.6 -18.4 -18.4 -18.5 -18.4 -18.3 -18.6 -18.8 -18.9 -19.2
Freq (GHz)
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6
Fmin (dB)
0.88 0.87 0.9 0.92 0.95 0.95 0.99 1 1.02 1.03 1.03 1.04 1.04 1.08 1.21 1.36
GAMMA OPT Mag Ang
0.61 0.64 0.65 0.6 0.64 0.63 0.62 0.62 0.61 0.63 0.62 0.6 0.61 0.58 0.49 0.46 16.3 22.4 28.4 33.5 37.2 40.2 45.4 47.6 49.2 50.9 53.9 55.4 57.6 67.9 120 151.2
Rn/50
0.45 0.43 0.44 0.43 0.42 0.41 0.4 0.4 0.4 0.39 0.38 0.37 0.37 0.33 0.14 0.08
Ga (dB)
14.8 14.8 14.7 14.2 14.2 14 13.7 13.6 13.4 13.4 13.2 12.9 12.9 12.1 9.6 8.4
7
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25C, Vds = 2.3 V, Vref = -0.7 V, Id = 6 mA, ZO = 50 Freq (GHz)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.911 0.904 0.896 0.887 0.875 0.864 0.853 0.84 0.826 0.82 0.812 0.806 0.797 0.787 0.78 0.738 0.695 0.649 0.609 0.573 0.529 0.507 0.485 0.502 0.574 0.639 0.686 0.715 0.741 0.774 0.789 0.797 0.833
S11 Ang.
-11 -17.7 -24.5 -31.2 -37.5 -43.7 -49.7 -55.6 -61.2 -64 -66.7 -69.4 -72.3 -74.9 -77.8 -91.2 -105.2 -120.2 -136.2 -152.7 175.9 147.2 119.4 92.5 65 42.1 23.9 5.8 -12 -29.2 -43.9 -54.3 -65.8
S21 Mag.
4.164 4.148 4.094 4.029 3.953 3.877 3.791 3.723 3.649 3.611 3.576 3.55 3.511 3.474 3.446 3.309 3.193 3.072 2.962 2.83 2.555 2.295 2.072 1.922 1.78 1.576 1.388 1.236 1.094 0.926 0.761 0.634 0.549
S21 Ang.
170.2 163.3 157.1 151.1 145.2 139.5 134 128.7 123.4 121 118.4 115.7 113.3 110.9 108.3 96.3 84.2 72.2 59.9 47.8 25 3.6 -16.8 -36.5 -58.3 -79.6 -98.8 -118.1 -138.4 -158 -175.8 169.4 153.8
S12 Mag.
0.026 0.03 0.036 0.043 0.05 0.057 0.063 0.069 0.075 0.078 0.081 0.084 0.086 0.089 0.091 0.102 0.112 0.119 0.125 0.128 0.13 0.129 0.123 0.123 0.132 0.134 0.136 0.137 0.137 0.131 0.125 0.121 0.117
S12 Ang.
23.5 32.6 38.5 41 41.3 40.4 38.8 36.7 34.5 33.3 32.1 30.7 29.4 28.1 26.7 19.7 12.6 4.9 -2.6 -10.4 -23.6 -36 -47.7 -52.7 -63.1 -75 -85.8 -97.7 -110.5 -123.3 -135.2 -145.5 -159
S22 Mag.
0.667 0.658 0.656 0.654 0.648 0.643 0.638 0.631 0.624 0.619 0.615 0.609 0.604 0.6 0.593 0.561 0.523 0.482 0.443 0.406 0.352 0.308 0.247 0.189 0.174 0.218 0.272 0.318 0.388 0.482 0.57 0.622 0.67
S22 Ang.
-8.4 -13.4 -18.5 -23.5 -28.2 -32.6 -36.8 -40.7 -44.6 -46.4 -48.2 -50.1 -51.7 -53.5 -55.1 -63.7 -72.6 -82 -92.3 -103 -123 -142.4 -159.2 178.9 132.2 88.5 59.8 34.5 9.3 -11.4 -26.3 -40.6 -55.4
S21 (dB)
12.4 12.4 12.2 12.1 11.9 11.8 11.6 11.4 11.2 11.2 11.1 11.0 10.9 10.8 10.7 10.4 10.1 9.7 9.4 9.0 8.1 7.2 6.3 5.7 5.0 4.0 2.8 1.8 0.8 -0.7 -2.4 -4.0 -5.2
Gmax (dB)
22.6 22.2 21.7 21.2 20.6 20.0 19.5 18.9 18.4 18.1 17.8 17.6 17.3 16.9 16.7 15.5 14.3 13.3 12.4 11.5 10.1 8.9 7.8 7.1 6.9 6.4 5.9 5.4 4.9 4.4 3.6 2.5 2.5
RLin RLout Isolation (dB) (dB) (dB)
-0.8 -0.9 -1.0 -1.0 -1.2 -1.3 -1.4 -1.5 -1.7 -1.7 -1.8 -1.9 -2.0 -2.1 -2.2 -2.6 -3.2 -3.8 -4.3 -4.8 -5.5 -5.9 -6.3 -6.0 -4.8 -3.9 -3.3 -2.9 -2.6 -2.2 -2.1 -2.0 -1.6 -3.5 -3.6 -3.7 -3.7 -3.8 -3.8 -3.9 -4.0 -4.1 -4.2 -4.2 -4.3 -4.4 -4.4 -4.5 -5.0 -5.6 -6.3 -7.1 -7.8 -9.1 -10.2 -12.1 -14.5 -15.2 -13.2 -11.3 -10.0 -8.2 -6.3 -4.9 -4.1 -3.5 -31.7 -30.5 -28.9 -27.3 -26.0 -24.9 -24.0 -23.2 -22.5 -22.2 -21.8 -21.5 -21.3 -21.0 -20.8 -19.8 -19.0 -18.5 -18.1 -17.9 -17.7 -17.8 -18.2 -18.2 -17.6 -17.5 -17.3 -17.3 -17.3 -17.7 -18.1 -18.3 -18.6
Freq (GHz)
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6
Fmin (dB)
0.71 0.74 0.76 0.79 0.81 0.8 0.82 0.83 0.85 0.85 0.87 0.87 0.88 0.9 1.03 1.14
GAMMA OPT Mag Ang
0.56 0.58 0.56 0.54 0.58 0.57 0.57 0.56 0.55 0.58 0.56 0.54 0.55 0.53 0.42 0.38 15.7 21.8 28.3 33.8 36.5 40 45.2 47.8 49.3 50.7 53.9 55.3 57.7 67.7 120.7 152.7
Rn/50
0.32 0.3 0.31 0.3 0.29 0.29 0.28 0.28 0.28 0.27 0.26 0.26 0.26 0.23 0.11 0.07
Ga (dB)
16.3 16.3 15.9 15.6 15.6 15.3 15.1 14.9 14.7 14.8 14.5 14.3 14.2 13.5 10.7 9.4
8
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25C, Vds = 2.4 V, Vref = -0.6 V, Id = 10 mA, ZO = 50 Freq (GHz)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.9 0.892 0.884 0.873 0.859 0.845 0.832 0.816 0.801 0.793 0.784 0.776 0.767 0.757 0.749 0.701 0.655 0.607 0.567 0.533 0.493 0.476 0.458 0.48 0.558 0.627 0.675 0.706 0.732 0.767 0.783 0.792 0.828
S11 Ang.
-11.5 -18.6 -25.7 -32.7 -39.4 -45.8 -52 -58.1 -63.9 -66.8 -69.6 -72.4 -75.3 -78 -80.9 -94.7 -108.9 -124.2 -140.4 -157.2 171.3 142.7 115.1 88.8 62.2 39.9 22.1 4.4 -13.3 -30.2 -44.7 -55.1 -66.5
S21 Mag.
5.023 4.993 4.919 4.83 4.728 4.623 4.509 4.412 4.312 4.259 4.211 4.171 4.117 4.07 4.029 3.829 3.659 3.49 3.335 3.163 2.828 2.526 2.271 2.094 1.935 1.712 1.512 1.351 1.2 1.022 0.849 0.713 0.622
S21 Ang.
169.8 162.7 156.3 150 143.9 138 132.4 126.9 121.5 119 116.4 113.7 111.2 108.7 106.2 94 81.9 70 58 46.1 23.9 2.9 -17 -36.3 -57.6 -78.3 -97.2 -116.2 -136.2 -155.6 -173.3 171.8 156
S12 Mag.
0.024 0.029 0.034 0.041 0.047 0.053 0.059 0.065 0.07 0.073 0.075 0.078 0.08 0.083 0.085 0.095 0.103 0.11 0.116 0.12 0.124 0.126 0.124 0.128 0.139 0.142 0.145 0.145 0.145 0.137 0.131 0.126 0.122
S12 Ang.
23.3 32.4 38.3 40.9 41.3 40.5 39.1 37.2 35 33.9 32.7 31.6 30.3 29 27.7 21.2 14.7 7.6 0.8 -6.3 -18.3 -30.1 -41.4 -47.3 -58.9 -71.7 -83.5 -96.3 -109.7 -123.1 -135.2 -145.7 -159.2
S22 Mag.
0.608 0.599 0.597 0.595 0.589 0.584 0.578 0.571 0.563 0.558 0.553 0.549 0.543 0.538 0.531 0.499 0.461 0.42 0.382 0.346 0.296 0.255 0.195 0.141 0.14 0.2 0.26 0.308 0.379 0.473 0.558 0.609 0.656
S22 Ang.
-8.7 -13.8 -19.1 -24.2 -29.1 -33.6 -37.8 -41.8 -45.7 -47.4 -49.2 -51 -52.7 -54.5 -56 -64.4 -73.1 -82.2 -92.6 -103.3 -123.4 -143.1 -159.7 176.8 120.6 76.5 50.1 26.4 3.1 -15.8 -29.5 -43 -57.3
S21 (dB)
14.0 14.0 13.8 13.7 13.5 13.3 13.1 12.9 12.7 12.6 12.5 12.4 12.3 12.2 12.1 11.7 11.3 10.9 10.5 10.0 9.0 8.0 7.1 6.4 5.7 4.7 3.6 2.6 1.6 0.2 -1.4 -2.9 -4.1
Gmax (dB)
23.2 22.8 22.4 21.8 21.2 20.5 20.0 19.4 18.8 18.5 18.2 18.0 17.7 17.4 17.1 15.8 14.7 13.7 12.8 12.0 10.6 9.5 8.3 7.6 7.4 7.0 6.5 6.0 5.6 5.1 4.3 3.4 3.3
RLin RLout Isolation (dB) (dB) (dB)
-0.9 -1.0 -1.1 -1.2 -1.3 -1.5 -1.6 -1.8 -1.9 -2.0 -2.1 -2.2 -2.3 -2.4 -2.5 -3.1 -3.7 -4.3 -4.9 -5.5 -6.1 -6.4 -6.8 -6.4 -5.1 -4.1 -3.4 -3.0 -2.7 -2.3 -2.1 -2.0 -1.6 -4.3 -4.5 -4.5 -4.5 -4.6 -4.7 -4.8 -4.9 -5.0 -5.1 -5.1 -5.2 -5.3 -5.4 -5.5 -6.0 -6.7 -7.5 -8.4 -9.2 -10.6 -11.9 -14.2 -17.0 -17.1 -14.0 -11.7 -10.2 -8.4 -6.5 -5.1 -4.3 -3.7 -32.4 -30.8 -29.4 -27.7 -26.6 -25.5 -24.6 -23.7 -23.1 -22.7 -22.5 -22.2 -21.9 -21.6 -21.4 -20.4 -19.7 -19.2 -18.7 -18.4 -18.1 -18.0 -18.1 -17.9 -17.1 -17.0 -16.8 -16.8 -16.8 -17.3 -17.7 -18.0 -18.3
Freq (GHz)
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6
Fmin (dB)
0.63 0.66 0.68 0.7 0.72 0.72 0.73 0.74 0.76 0.78 0.78 0.79 0.8 0.82 0.94 1.05
GAMMA OPT Mag Ang
0.53 0.54 0.55 0.52 0.55 0.56 0.53 0.53 0.52 0.54 0.53 0.51 0.52 0.5 0.38 0.34 15.3 21.4 28.5 33.8 37 39.9 45.5 48.3 49.6 50.7 54 55.6 57.6 67.5 121.3 155
Rn/50
0.27 0.26 0.26 0.25 0.25 0.25 0.24 0.23 0.23 0.23 0.22 0.22 0.22 0.2 0.1 0.07
Ga (dB)
17.2 17.1 16.9 16.5 16.4 16.2 15.8 15.6 15.4 15.4 15.2 15 14.9 14.2 11.2 10
9
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25C, Vds = 2.5 V, Vref = -0.5 V, Id = 20 mA, ZO = 50 Freq (GHz)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.889 0.88 0.87 0.858 0.842 0.826 0.81 0.792 0.774 0.765 0.755 0.746 0.736 0.724 0.716 0.664 0.616 0.566 0.528 0.495 0.46 0.448 0.436 0.462 0.544 0.617 0.668 0.7 0.728 0.763 0.78 0.789 0.825
S11 Ang.
-12.1 -19.5 -27 -34.3 -41.2 -47.9 -54.3 -60.7 -66.6 -69.6 -72.5 -75.4 -78.3 -81 -84 -98 -112.4 -128 -144.5 -161.5 166.9 138.5 111.1 85.4 59.7 38.1 20.6 3.1 -14.4 -31.2 -45.5 -55.8 -67.1
S21 Mag.
5.952 5.901 5.803 5.684 5.548 5.407 5.26 5.126 4.99 4.922 4.857 4.797 4.729 4.668 4.612 4.34 4.107 3.886 3.686 3.473 3.078 2.737 2.452 2.252 2.075 1.836 1.626 1.457 1.299 1.111 0.93 0.788 0.691
S21 Ang.
169.3 162 155.3 148.8 142.5 136.5 130.6 125 119.5 116.9 114.3 111.5 109 106.5 103.9 91.7 79.7 67.9 56.1 44.5 22.8 2.4 -17.1 -36 -56.8 -77.2 -95.6 -114.4 -134.1 -153.3 -170.8 174.2 158.3
S12 Mag.
0.023 0.027 0.032 0.037 0.043 0.049 0.055 0.06 0.065 0.067 0.069 0.072 0.074 0.076 0.078 0.087 0.095 0.102 0.108 0.113 0.119 0.124 0.125 0.133 0.146 0.15 0.153 0.153 0.153 0.144 0.137 0.132 0.126
S12 Ang.
22.8 32 38.2 40.9 41.5 40.9 39.6 38 36.1 35 34 32.9 31.8 30.6 29.4 23.6 17.8 11.3 5.1 -1.3 -12.5 -24.1 -35.3 -42.2 -54.9 -68.5 -81 -94.4 -108.4 -122.2 -134.6 -145.3 -159
S22 Mag.
0.541 0.532 0.531 0.528 0.523 0.518 0.511 0.505 0.497 0.493 0.488 0.483 0.477 0.473 0.467 0.435 0.399 0.36 0.324 0.291 0.245 0.208 0.15 0.099 0.114 0.191 0.256 0.305 0.377 0.469 0.552 0.599 0.645
S22 Ang.
-9 -14.1 -19.6 -24.7 -29.7 -34.2 -38.4 -42.4 -46.2 -47.9 -49.6 -51.5 -53 -54.7 -56.2 -64.1 -72.4 -81.1 -91.4 -102.1 -122.3 -142.5 -158.6 175.9 106.8 65.3 41.5 19.4 -2.4 -19.6 -32.5 -45.4 -59
S21 (dB)
15.5 15.4 15.3 15.1 14.9 14.7 14.4 14.2 14.0 13.8 13.7 13.6 13.5 13.4 13.3 12.7 12.3 11.8 11.3 10.8 9.8 8.7 7.8 7.1 6.3 5.3 4.2 3.3 2.3 0.9 -0.6 -2.1 -3.2
Gmax (dB)
23.8 23.3 22.9 22.3 21.6 21.0 20.4 19.8 19.2 18.9 18.6 18.3 18.0 17.7 17.5 16.2 15.1 14.1 13.2 12.4 11.1 9.9 8.8 8.1 7.9 7.5 7.1 6.6 6.2 5.8 5.0 4.1 4.1
RLin RLout Isolation (dB) (dB) (dB)
-1.0 -1.1 -1.2 -1.3 -1.5 -1.7 -1.8 -2.0 -2.2 -2.3 -2.4 -2.5 -2.7 -2.8 -2.9 -3.6 -4.2 -4.9 -5.5 -6.1 -6.7 -7.0 -7.2 -6.7 -5.3 -4.2 -3.5 -3.1 -2.8 -2.3 -2.2 -2.1 -1.7 -5.3 -5.5 -5.5 -5.5 -5.6 -5.7 -5.8 -5.9 -6.1 -6.1 -6.2 -6.3 -6.4 -6.5 -6.6 -7.2 -8.0 -8.9 -9.8 -10.7 -12.2 -13.6 -16.5 -20.1 -18.9 -14.4 -11.8 -10.3 -8.5 -6.6 -5.2 -4.5 -3.8 -32.8 -31.4 -29.9 -28.6 -27.3 -26.2 -25.2 -24.4 -23.7 -23.5 -23.2 -22.9 -22.6 -22.4 -22.2 -21.2 -20.4 -19.8 -19.3 -18.9 -18.5 -18.1 -18.1 -17.5 -16.7 -16.5 -16.3 -16.3 -16.3 -16.8 -17.3 -17.6 -18.0
Freq (GHz)
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6
Fmin (dB)
0.59 0.64 0.66 0.68 0.68 0.69 0.72 0.73 0.74 0.75 0.76 0.77 0.79 0.82 0.93 1.06
GAMMA OPT Mag Ang
0.52 0.53 0.53 0.51 0.54 0.54 0.51 0.51 0.5 0.51 0.51 0.48 0.5 0.47 0.34 0.31 15.7 21.7 28.9 34.2 38.5 40.8 46.4 48.8 50.5 52.4 55.4 56.3 59 68.6 125.1 160.6
Rn/50
0.25 0.24 0.24 0.23 0.23 0.23 0.22 0.22 0.21 0.21 0.2 0.2 0.2 0.18 0.09 0.07
Ga (dB)
18.1 17.9 17.7 17.3 17.2 17 16.5 16.4 16.2 16.1 15.9 15.6 15.6 14.7 11.7 10.5
10
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25C, Vds = 2.7 V, Vref = -0.3 V, Id = 40 mA, ZO = 50 Freq (GHz)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag.
0.889 0.88 0.87 0.857 0.841 0.823 0.807 0.788 0.769 0.76 0.75 0.739 0.73 0.718 0.709 0.656 0.608 0.559 0.521 0.49 0.457 0.447 0.436 0.462 0.546 0.621 0.672 0.705 0.733 0.768 0.786 0.794 0.83
S11 Ang.
-12.3 -19.8 -27.4 -34.9 -41.9 -48.7 -55.2 -61.6 -67.6 -70.6 -73.5 -76.3 -79.4 -82.2 -85.2 -99.3 -113.8 -129.5 -146 -163 165.4 137.1 109.8 84.5 59.1 37.8 20.3 2.9 -14.6 -31.3 -45.7 -56.1 -67.4
S21 Mag.
6.174 6.117 6.012 5.885 5.74 5.589 5.435 5.289 5.145 5.072 5.003 4.93 4.865 4.801 4.739 4.447 4.197 3.963 3.751 3.53 3.124 2.776 2.484 2.28 2.102 1.861 1.649 1.478 1.32 1.129 0.946 0.801 0.703
S21 Ang.
169.2 161.8 155.1 148.5 142.1 136 130.2 124.5 119 116.3 113.7 111 108.4 105.9 103.3 91 79 67.3 55.6 44.1 22.5 2.2 -17.2 -36 -56.7 -77 -95.4 -114.1 -133.9 -153.1 -170.6 174.5 158.5
S12 Mag.
0.022 0.025 0.029 0.035 0.04 0.046 0.051 0.055 0.06 0.062 0.064 0.066 0.068 0.07 0.072 0.081 0.089 0.095 0.101 0.106 0.114 0.12 0.122 0.132 0.146 0.152 0.155 0.157 0.157 0.149 0.141 0.136 0.131
S12 Ang.
22.3 31.6 37.9 40.9 41.7 41.4 40.2 38.7 37 36.1 35.1 34.2 33.1 32 30.9 25.5 20 14 8.2 2 -8.6 -19.8 -30.9 -37.8 -50.8 -64.7 -77.6 -91.3 -105.8 -119.7 -132.5 -143.6 -157.4
S22 Mag.
0.508 0.501 0.499 0.497 0.493 0.488 0.483 0.477 0.47 0.466 0.462 0.458 0.452 0.448 0.442 0.413 0.38 0.344 0.31 0.278 0.236 0.201 0.146 0.096 0.101 0.177 0.244 0.293 0.366 0.461 0.545 0.595 0.641
S22 Ang.
-8.9 -13.7 -19.1 -24.2 -29 -33.4 -37.5 -41.3 -45 -46.5 -48.2 -50 -51.4 -53 -54.5 -61.9 -69.7 -77.9 -87.7 -98 -117.5 -137.1 -151.4 -173.8 112 66.8 42.3 19.8 -2.2 -19.1 -32.1 -45.1 -58.8
S21 (dB)
15.8 15.7 15.6 15.4 15.2 14.9 14.7 14.5 14.2 14.1 14.0 13.9 13.7 13.6 13.5 13.0 12.5 12.0 11.5 11.0 9.9 8.9 7.9 7.2 6.5 5.4 4.3 3.4 2.4 1.1 -0.5 -1.9 -3.1
Gmax (dB)
23.9 23.5 23.0 22.4 21.7 21.0 20.4 19.8 19.2 18.9 18.6 18.3 18.0 17.7 17.5 16.2 15.1 14.1 13.3 12.5 11.2 10.0 8.9 8.2 8.0 7.6 7.2 6.8 6.4 6.0 5.2 4.3 4.3
RLin RLout Isolation (dB) (dB) (dB)
-1.0 -1.1 -1.2 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 -2.4 -2.5 -2.6 -2.7 -2.9 -3.0 -3.7 -4.3 -5.1 -5.7 -6.2 -6.8 -7.0 -7.2 -6.7 -5.3 -4.1 -3.5 -3.0 -2.7 -2.3 -2.1 -2.0 -1.6 -5.9 -6.0 -6.0 -6.1 -6.1 -6.2 -6.3 -6.4 -6.6 -6.6 -6.7 -6.8 -6.9 -7.0 -7.1 -7.7 -8.4 -9.3 -10.2 -11.1 -12.5 -13.9 -16.7 -20.4 -19.9 -15.0 -12.3 -10.7 -8.7 -6.7 -5.3 -4.5 -3.9 -33.2 -32.0 -30.8 -29.1 -28.0 -26.7 -25.8 -25.2 -24.4 -24.2 -23.9 -23.6 -23.3 -23.1 -22.9 -21.8 -21.0 -20.4 -19.9 -19.5 -18.9 -18.4 -18.3 -17.6 -16.7 -16.4 -16.2 -16.1 -16.1 -16.5 -17.0 -17.3 -17.7
Freq (GHz)
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6
Fmin (dB)
0.69 0.73 0.73 0.77 0.77 0.8 0.83 0.85 0.86 0.9 0.91 0.91 0.93 0.98 1.19 1.35
GAMMA OPT Mag Ang
0.56 0.57 0.56 0.54 0.58 0.57 0.55 0.54 0.54 0.54 0.54 0.52 0.52 0.49 0.37 0.35 17.3 23.9 30.8 36.5 40.7 43.9 49.7 52.1 54.3 55.5 59.3 61 63.2 74.7 136 172.8
Rn/50
0.32 0.3 0.31 0.3 0.29 0.29 0.28 0.27 0.27 0.26 0.26 0.25 0.25 0.22 0.1 0.08
Ga (dB)
18.5 18.3 18 17.6 17.6 17.3 16.9 16.7 16.5 16.4 16.2 16 15.8 15 11.9 10.7
11
Part Number Ordering Information
Part Number MGA-71543-TR1 MGA-71543-TR2 MGA-71543-BLK MGA-71543-TR1G MGA-71543-TR2G MGA-71543-BLKG No. of Devices 3000 10000 100 3000 10000 100 Container 7" Reel 13" Reel antistatic bag 7" Reel 13" Reel antistatic bag
Note: For lead-free option, the part number will have the character "G" at the end.
Package Dimensions Outline 43 SOT-343 (SC70 4-lead)
1.30 (.051) BSC
HE
E
1.15 (.045) BSC b1 D
A
A2
b
A1 L DIMENSIONS (mm)
C
SYMBOL E D HE A A2 A1 b b1 c L
MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.25 0.55 0.10 0.10
MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46
NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish.
12
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
71
71
71
71
Tape Dimensions For Outline 4T
P P0 D P2
E
F W C
D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10 MAX.
K0
10 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 1.55 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 - 0.10 0.254 0.02 5.40 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 0.061 + 0.002 0.157 0.004 0.069 0.004 0.315 + 0.012 0.0100 0.0008 0.205 + 0.004 0.0025 0.0004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE
13
Designing with MGA-71543, a Low Noise Amplifier with Built-in Mitigated Bypass Switches
Introduction The MGA-71543 is a single stage GaAs RFIC low noise amplifier with an integrated bypass switch (Figure 1).
The MGA-71543 is a small LNA/ Bypass Switch MMIC that provides a low noise figure, a high gain and high third order input intercept point (IIP3) ideal for the first stage LNA of PCS CDMA and W-CDMA. Device Description The MGA-71543 is a single stage GaAs IC with a built-in bypass switch housed in a SOT-343 package. The device diagram is shown in Figures 1 and 2.
Bypass Mode RF in RF out
ing the same matching network at both states (LNA State and Bypass State). This makes the MGA-71543 ideal for use between duplexers and image reject filters. The MGA-71543 offers an integrated solution of LNA with adjustable IIP3. The IIP3 can be fixed to a desired current level for the receiver's linearity requirements. The LNA has a bypass switch function, which sets the current to zero (2 A) and provides low insertion loss when in bypass mode. The bypass mode also boosts dynamic range when high level signal is being received. Many CDMA systems operate 20% LNA and 80% bypass mode. For example, with the bypass draw of zero and LNA of 10 mA, the MGA-71543 allows an average of only 2 mA current.
RF IN
RF OUT
Switch & Bias
Amplifier Mode
Figure 1. MGA-71543 Functional Diagram.
Figure 2. Simplified Schematic.
This application note describes a low noise amplifier design using Agilent Technologies' MGA-71543. The MGA-71543 is designed for receivers and transmitters operating from 100 MHz to 6 GHz, mainly for CDMA applications i.e. IS-95 CDMA1900, CDMA800 and W-CDMA. It can be used as a first stage (Q1) in a CDMA PCS 1900 MHz application currently filled by a single transistor. Its bypass capability adds features over the single transistor solution with no performance loss. The device can also be used as a driver amplifier for CDMA800. The purpose of the switch feature is to prevent distortion of high signal levels in receiver applications by bypassing the amplifier. Furthermore, zero current draw, when in bypass mode, saves current thus improving battery life. The internally matched switching circuit provides a 20 dB gain step and also reduces gain ripple and mismatch in system usage.
Input & DCref
+ -
+ - Control Output & Vd Gain FET
GND
GND & Vc
Figure 3. Bypass State Duplicates the In and Out Impedance.
The MGA-71543 is a GaAs MMIC, processed on Agilent's cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. Biasing This IC can be biased like a depletion mode discrete GaAsFET. Two kinds of passive biasing can be used: gate bias (Figure 4) and source resistor bias method (Figure 6). Gate Bias Pins 1 and 4 (Figure 4) are DC grounded and a negative bias voltage is applied to Pin 3 in addition to the power supply (2.7 or 3 V) applied to Pin 2. This method of biasing has the advantage of minimizing parasitic source inductance because the device is directly DC and RF grounded.
The MGA-71543 features a minimum noise figure of 0.8 dB and 16 dB available gain. The input and output are partially matched, and only a simple series/shunt inductor match is required to achieve low noise figure and VSWR into 50. When set into the bypass mode, both input and output are internally matched through a mitigative circuit. This circuit draws no current (less than 2 A), yet duplicates the in and out impedance of the LNA (Figure 3). This allows the system user to have minimum mismatch change from LNA to Bypass mode, thus allow-
14
Input
3
1
Vref
4
2
Output & Vd
Figure 4. Gate Bias Method.
The DC supply at the input terminal (Vref) can be applied through a RF choke (inductor). The voltage at Vref (Pin 3) with respect to ground determines the device current, Id. A plot of typical Id vs. Vref is shown in Figure 5. Maximum device current (approximately 60 mA) occurs at Vref = 0 (i.e. Vgs= 0). When using the gate biasing method, the bypass mode is activated when Vds = 0V and Vref < -2V.
70 60 50
The current of the amplifier (Id) is set by the value of the resistor Rbias. This resistor (Rbias) is connected at Pin 4 as shown in Figure 6 and RF bypassed. At least two capacitors in parallel are recommended for RF bypassing. One capacitor (100 pF) for high frequency bypassing and a second, large value capacitor for better low frequency bypassing. The large value capacitor is added in parallel to improve the IP3 because they help ground the low frequency mixing terms that are generated during a two tones test (i.e. f1 - f2 term which is the separation of the two tones usually 1 to a few MHz) and thus improve the IIP3.
Input 3 1
The approximate value of the external resistor, Rbias, may also be calculated from: Rbias = 964 (1 - 0.112 Id) Id where Rbias is in ohms and Id is the desired device current in mA. A simple method for DC grounding the input terminal (Pin 3) is to use a shunt inductor that is also part of the noise-matching network. Adaptive Biasing For applications in which input power levels vary over a wide range, it may be useful to dynamically adapt the bias of the MGA-71543 to match the signal level. A sensor senses the signal level at some point in the system (usually in the baseband circuitry) and automatically adjusts the bias current of the amplifier accordingly. The main advantage of adaptive biasing is conservation of supply current (longer battery life) by using only the amount of current necessary to handle the input signal without distortion. Adaptive biasing of the MGA-71543 can be accomplished by simple digital means (Figure 8). For instance simple electronic switches can be used to control the value of the source resistor in discrete increment.
71
71
4 2 Output & Vd Rbias
Id (mA)
40 30 20 10 0 -1 -0.8 -0.6 Vref (V) -0.4 -0.2
Figure 6. Source Resistor Bias Method.
Maximum current (about 60 mA) occurs when Rbias= 0. A plot of typical Id vs. Rbias is shown in Figure 7.
60 50
Figure 5. Device Current vs. Vref.
This kind of biasing would not usually be used unless a negative supply voltage was readily available. Source Resistor Bias This is the recommended method because it only requires one (positive) power supply. As shown in Figure 6, Pin 3 is DC grounded and pins 1 and 4 are RF bypassed.
40
Id (mA)
30
3
20 10 0 0 20 40 60 80 100 120 140 Rbias ()
2 1 4
DC Return Path
Figure 7. Device Current vs. Rbias.
Digital Control
Figure 8. Adaptive Bias Control using Digital Method.
15
Applying the Device Voltage Common to all methods of biasing, voltage Vd is applied to the MGA-71543 through the RF output connection (Pin 2). The bias line is capacitively bypassed to keep RF from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier. Where practical, it may be cost effective to use a length of high impedance transmission line (usually /4 line) in place of the RFC. When using the gate bias method, the applied device voltage, Vds, is equal to voltage Vd (at pin 2) since Vs is zero.
Vd ~ +2.5 V
Controlling the Switch The device current controls the state of the MGA-71543 (amplifier or bypass mode). For device currents greater than 3 mA, it functions as an amplifier. If a lower current is drawn, the gain of the amplifier is significantly reduced and the performance will degrade. If the device current is set to zero, the MGA-71543 is switched into a bypass mode in which the signal is routed around the amplifier with a loss of about 5.6 dB. The simplest way of switching the MGA-71543 to the bypass mode is to open-circuit the terminals at Pins 1 and 4. The bypass mode is also set by increasing the source resistance Rbias to greater than 1 M. With the DC ground connection open, the internal control circuit of the MGA-71543 autoswitches from amplifier mode into a bypass mode and the device current drops to near zero. Typical bypass mode current is 2 A.
3 2
constants of the external bias circuit components (current setting resistor and bypass capacitors). These external components increase the switching time to around 100ns. Furthermore, the switching ON time is slightly lower (faster) than the switching OFF time (i.e. It switches on faster). Thermal issues The Mean Time To Failure (MTTF) of semiconductors is inversely proportional to the operating temperature. When biased at 3V and 10 mA for LNA applications, the power dissipation is 3V x 10 mA = 30 mW. The temperature increment from the RFIC channel to its case is then 30 mW x jc = 0.030 watt x 240C/watt = 7.2C. Subtracting the channel-to-case temperature rise from the suggested maximum junction temperature of 150C, the resulting maximum allowable case temperature is 143C. The worst case thermal situation occurs when the MGA-71543 is operated at its maximum operating conditions in an effort to maximize output power or achieve minimum distortion. A similar calculation for the maximum operating bias of 4.2 volts and 50 mA yields a maximum allowable case temperature of 100C. (i.e. 210 mW x jc = 0.210 watt x 240C/watt = 50.4C 150C - 50.4C = 100C.) This calculation assumes the worst case of no RF power being extracted from the device. When operated in a saturated mode, both power-added efficiency and the maximum allowable case temperature will increase. Note: "Case" temperature for surface mount packages such as the SOT-343 refers to the interface between the package pins and the
1
RF Input
2
RF Output
71
3 4
Vref = -0.5 V
Figure 9. DC Schematic for Gate Bias.
For source resistor biasing method, the applied device voltage, Vds, is Vd - Vs. The bias control voltage is Vs (Pin 4) which is set by the external bias resistor. A source resistor bias circuit is shown in Figure 10.
Vd = +3 V
1
4 Rbias Bypass Switch Enable
Figure 11. MGA-71543 Amplifier/Bypass State Switching.
1
RF Input
2
RF Output
71
3 4
Rbias
A digital switch can be used to control the amplifier and Bypass State as shown in Figure 11. Switching Speed The speed at which the MGA-71543 switches between states is extremely fast. The intrinsic switching speed is typically around 10 ns. However in practical circuits, the switching speed is limited by the time
Figure 10. DC Schematic for Source Bias.
16
mounting surface, i.e., the temperature at the PCB mounting pads. The primary heat path from the RFIC chip to the system heatsink is by means of conduction through the package leads and ground vias to the ground plane of the PCB. Grounding Consideration in PCB Layout The MGA-71543 requires careful attention during grounding. Any device with gain can be made to oscillate if feedback is added. Since poor grounding adds series feedback, it can cause the device to oscillate. Poor grounding is one of the most common causes of oscillation in RF components. Careful attention should be used when RF bypassing the ground terminals when the device is biased using the source resistor method. Package Footprint The PCB pad print for the miniature, 4-lead SOT-343 (SC70) package is shown in Figure 12.
1.30 0.051 1.00 0.039
RF bypass For layouts using the source resistor method of biasing, both of the ground terminals of the MGA-71543 must be well bypassed to maintain device stability. Beginning with the package pad print in Figure 12, and RF layout similar to the one shown in Figure 13 is a good starting point for using the MGA-71543 with capacitor-bypassed ground terminals. It is a best practice to use multiple vias to minimize overall ground path inductance.
LNA Application In the following sections the LNA design is described in a more general way. Sample evaluation boards for 1900 MHz and 800 MHz are shown in a table (Table 1) and the appropriate board diagram is shown (Figures 22 and 23). A second smaller size board is also shown (Figures 25 and 26) with the corresponding table (Table 2). The smaller board is an example of reducing the size of the layout, more suitable for handset manufacturers. For low noise amplifier application, the LNA is typically biased 6 to 20 mA. The MGA-71543 is a conditionally stable device, therefore, the proper input and output loads must be presented in addition to properly RF grounding the device. Please refer to the stability section for tips on preventing oscillation. The LNA can be switched ON or OFF by a simply varying the resistor to its ground leads as described in previous sections. Matching Networks for the LNA
in L
Size 0402 recommended for the bypass capacitors
71
Figure 13. Layout for RF Bypass.
0.60 0.024
2.00 0.079
.090 0.035 1.15 0.045 Dimensions in inches mm
PCB Materials 0.031 inches thick of FR-4 or G-10 type dielectric materials are typical choices for most low cost wireless applications using single layer printed boards. As an alternative, a Getek material with a multilayer printed circuit board can be used for a smaller size board, where: 1st layer: RF routing layer 2nd layer: Ground layer 3rd layer: Power (DC) routing layer 4th layer: Other RF routing layer The spacing between the layers is as follows: Between the 1st and 2nd: 0.005" Between the 2nd and 3rd: 0.020" Between the 3rd and 4th: 0.005"
Input Match 50
LNA
Output Match 50
s or opt
opt
Figure 14. Input and Output Matching Terminology.
Figure 12. Recommended PCB Pad Layout for Agilent's SC70 4L/SOT-343 Products.
The layout is shown with a footprint of the MGA-71543 superimposed on the PCB pads for reference.
The input matching network determines the noise figure and return loss (S11) of our amplifier. The output-matching network determines the IP3 and output return loss (S22). Furthermore, both input and output matching networks influence the gain. The best gain (Maximum Available Gain-MAG) and lowest input return loss is obtained when both the input and output are conju-
17
gately matched to 50. For instance at the input, when s = in* the highest gain with the best power transfer is obtained where s is the source reflection coefficient presented to the input pin. For best noise, s = OPT, where OPT is the source reflection coefficient for optimum NF match and is determined empirically (experimentally). However, an input match where s = OPT does not necessarily yield the best return loss nor the best gain. Input Match To allow flexibility for the designer, the LNA is intended to be used with external matching network at the input. The noise performance of a two port can be determined if the values of the noise parameters Fmin, rn = Rn /50 and OPT are known (shown in the datasheet), where these parameters are given by:
satisfied. However, this might affect our return loss at the input because it creates more mismatch (at the input) and there is less power transfer to the LNA. Therefore the best solution should be the one that gives a reasonable input return loss with the best noise figure associated to it. The noise figure F of an amplifier is determined by the input matching circuit. The output matching does not affect the noise (has a significantly minimal effect on noise figure). To obtain the best noise match a simple two elements match is used at the input of the device. Using the OPT magnitude and phase at the frequency of interest, the noise match is done. The topology that has a capacitor to ground is ignored because it does not allow the input to be DC grounded as is required by the source bias method. Therefore the series-L-shunt-L topology is used. The final values of the noise matching circuit (input match) was a result of some more empirical tuning in the lab that was a compromise between the various important parameters. Typical Gain, noise and stability circles are shown in Figures 17 - 20. Most simulations were done using Agilent-EEsof's Advanced Design System (ADS). Stability A stable circuit is a circuit that does not oscillate. Oscillation can take the form of spurious signal and noise generation. This usually results in changes in DC operating point (bias level fluctuates). The oscillations can be triggered by changes in the source (input match), load (output match), bias level and last but not least: improper grounding.
Design for Stability The main potential for oscillation with the MGA-71543 is improper grounding and/or improper RF bypass capacitors. Any device with gain can be made to oscillate if feedback is added. Proper grounding may be achieved by minimizing inductance paths to the ground plane. Passive components should be chosen for high frequency operation. Bias circuit self resonance due to inadequate bypass capacitors or inadequate grounding may cause high frequency, out of band, instability. Smaller 0402 size bypass capacitors are recommended to minimize parasitic inductance and resonance of the bias circuit. Statistical Parameters Several categories of parameters appear within the electrical specification portion of the MGA-71543 datasheet. Parameters may be described with values that are either "minimum or maximum", "typical" or "standard deviations". The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on a statistically significant number of parts taken from nonconsecutive process lots of semiconductor wafers. The data derived from product characterization tends to be normally distributed, e.g. fits the standard bell curve.
68%
F50 = Fmin +
4rn|s - OPT| 2 (1 - |s| 2 ) |1 + OPT| 2
rn = (F50 - Fmin)
|1 + OPT| 2 4|OPT| 2
OPT = ZOPT - ZO ZOPT + ZO
Where Fmin is the minimum noise figure that is obtained when s = OPT . Rn is the noise resistance that indicates the sensitivity of the noise performance. s is the source reflection coefficient presented to the input pin. OPT is the source reflection coefficient for optimum NF match. Any change in s affects the noise figure of our amplifier. To obtain the best noise figure, the following relation: s = OPT must be
95% 99% -3 -2 -1 Mean () +1 +2 (typical) Parameter Value +3
Figure 15. Normal Distribution Curve.
18
Parameters considered to be the most important to system performance are bounded by minimum or maximum values. For the MGA-71543, these parameters are: Vref test, NFtest, Gatest, IIP3 test, and ILtest. Each of the guaranteed parameters is 100% tested as part of the normal manufacturing and test process. Values for most of the parameters in the table of Electrical Specifications that are described by typical data are the mathematical mean (), of the normal distribution taken from the characterization data. For parameters where measurements or mathematical averaging may not be practical, such as S-parameters or Noise parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. Typical values are intended to be used as a basis for electrical design. To assist designers in optimizing not only the immediate amplifier circuit using the MGA-71543, but to also evaluate and optimize tradeoffs that affect a complete wireless system, the standard deviation () is provided for many of the Electrical Specification parameters (at 25C). The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation.
Standard statistics tables or calculations provide the probability of a parameter falling between any two values, usually symmetrically located about the mean. Referring to Figure 15 for example, the probability of a parameter being between 1 is 68.3%; between 2 is 95.4%; and between 3 is 99.7%. Phase Reference Planes The positions of the reference plane used to specify S-parameters and Noise Parameters for the MGA-71543 are shown in Figure 16. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit.
Reference Planes
Electronic devices may be subjected to ESD damage in any of the following areas: Storage & handling Inspection Assembly & testing In-circuit use The MGA-71543 is an ESD Class 1 device. Therefore, proper ESD precautions are recommended when handling, inspecting, testing, assembling, and using these devices to avoid damage. Any user-accessible points in wireless equipment (e.g., antenna or battery terminals) provide an opportunity for ESD damage. For circuit applications in which the MGA-71543 is used as an input or output stage with close coupling to an external antenna, the RFIC should be protected from high voltage spikes due to human contact with the antenna.
Test Circuit
Figure 16. Phase Reference Planes.
Electrostatic Sensitivity RFICs are electrostatic discharge (ESD) sensitive devices. Although the MGA-71543 is robust in design, permanent damage may occur to these devices if they are subjected to high-energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the human body and on test equipment) can discharge without detection and may result in failure or degradation in performance and reliability.
Figure 17. In-circuit ESD Protection.
A best practice, illustrated in Figure17, is to place a shunt inductor (RFC) at the antenna connection to protect the receiver and transmitter circuits. It is often advantageous to integrate the RFIC into a diplexer or T/R switch control circuitry.
19
Demonstration Board
Source unstable G = 18.8 dB Load unstable region G = 17.8 dB G = 16.8 dB Load stable region G = 15.8 dB G = 14.8 dB NF = 0.95 dB NF = 1.15 dB NF = 1.35 dB NF = 1.55 dB Load stability circle Gain Circles NF = 0.75 dB Noise Circles Source stability circle Source stable
Figure 18. Gain, Noise and Stability Circles.
Figure 19. Noise Circles F = 1900 MHz, Step Size: 0.2 dB.
Figure 20. Gain Circle F = 1900 MHz, Step Size: 1.0 dB.
Figure 21. Load and Source Stability Circles.
Vd +3.0V
C11
C10
L3 R4 C4 C5 1 2 C9 RF Output
71
RF Input C1 L1 3 C6 L2 C2 SW1 R3 4 C8 C7
R1
SW2
R2
Figure 22. Schematic Diagram of Evaluation Board Amplifier.
20
Agilent MGA-71543 Eval Circuit
GND
Vd
C11
C10 C4 C5 R4 L3 C9 OUT
IN
C1
L1 L2 C2 C7 R3
C6
C8
R2
R1 Vc
EB 7/00
REV 2
Figure 23. Amplifier Evaluation Circuit with Component Designators. Actual board size is 1.1 x 1.3 inches, 0.031 inches thick.
Board Designation
71 C1 C2, C5, C6, C7, C10 C9 C4, C8, C11 L1 L2 L3 R1 R2 R4 / L4 R3 Note 1: Device under Test
Description PCS-1900 800 MHz
DUT[1] 100 pF 100 pF 47 pF 0.01 F 1.5 nH 2.7 nH 3.9 nH 51 115 0 (1900) 60 DUT[1] 8.2 pF 100 pF 2.7 pF 0.01 F 18 nH 33 nH 33 nH 51 115 18 nH 60
Part Number
MGA-71543
Package
SOT-343 (4 lead SC-70 package) Size 0402 Size 0402 Size 0402 Size 0603 or 0402
TOKO LL1005 TOKO LL1005 TOKO LL1005
Size 0402 Size 0402 Size 0402 Size 0402 Size 0805 (for 6mA Bias)
-- / LL1608-FH or 1005-FH
Size 0805 (Jumper) / Size 0603 (inductor) Size 0805 (for 10mA Bias)
Table 1. Component Values for 1900 MHz and 800 MHz.
21
MGA-71543
Analog Front-end Demodulator ADC ADC
Digital Base-band Processor
Dual Synthesizer Dual VCO
DAC DAC RF Control Signal (PDM )
Figure 24. System Level Overview of MGA-71543 for Handset Designers.
These are the actual necessary components. The other connectors and board space are only for production.
blue2_lna rev2.1
L25
PCS_OUT
L25
RF1
PCS_IN
C9
L6
C8 R20
U4
PCS_LNA
PCS_LNA
C9
L6
L7 R38 C8 R20
C44 C37 R21 R25
L5
C37 R25 R21
R24
33.1 mm 1.303 in
PCS_IN
L7 R38
C44
L5
C38
U2
R37 C47
RF3
C36
C12
C36
C12
C38
U2
R37
C47
R24
Cell_LNA
GND
U4
Vcc
J10
J9
J8
J7
PCS_LNA
AGILENT TECHNOLOGIES
20.1 mm 0.791 in
PCS_LNA GND
Cell_LNA
GND
Vcc
R28
R18
R17
Software controlling the switch
Manual switch control
Figure 25. Small Size Amplifier Board with Components for Handset Focussed Designers.
22
R16
4 layer Board Designation
U2 or 71 U4 or O3 C12 C8, C47 C9, C44 C38 C36, C37 L5 L6 L7 L25 R38 R20 R21 R24, R25 R16, R17 R37 R18, R28 Note 1: Device under Test
Description PCS-1900
DUT[1] Switch b/n Gnd resistors 2.2 pF 0.033 F 100 pF Not used 27 pF 3.9 nH 4.7 nH 1.5 nH Not used 51 36 56 6 0 0 Not used
Part Number
MGA-71543 FDG6303N
Package
SOT-343 (SC-70) Dual N-channel, Digital FET Size 0402 Size 0402 Size 0402
Size 0402 TOKO LL1005 TOKO LL1005 TOKO LL1005 Size 0402 Size 0402 Size 0402 For tuning/Not used here Size 0402 Size 0402 (for 16 mA Bias) Size 0402 (for 11 mA Bias) Size 0402 Size 0402 (Jumper) Size 0402 (Jumper) Used with other FET switches
Table 2. Component Values for 1900 MHz Amplifier on Smaller Board.
References 1. Application note RLM020199, "Designing with the MGA-72543 RFIC Amplifier/Bypass Switch". 2. G.D.Vendelin, A.M.Pavio and U.L.Rhode, "Microwave Circuit Design Using Linear and Nonlinear Techniques".
23
MGA-71543
blue2_lna rev2.1
L25 C36 C38 C9
L6
PCS_OUT
RF IN
RF OUT
C12
L5
PCS_IN
U2
L7 R38 C8 R20
R37 C47 R24
Switch & Bias Control
C44 C37 R25 R21
U4
PCS_LNA
PCS_LNA
Cell_LNA
1 or 4*
6 or 3
GND
2 or 5
5 or 2
Vcc
J10
J9
J8
J7
3 or 6
4 or 1*
GND
Vcc
AGILENT TECHNOLOGIES
G2 D1
S2
03
D2 SC70-6 S1 G1
U4 = FDG6303N
Dual N-channel, Digital FET
MGA-71543
IN C9 L7
C36 R38 C12 OUT
L6 Not used in this case. These could be used with other digital FET to select more discrete current values.
R38 C37 C8 R20 R21
1 or 4* 6 or 3
L5 C44 R25 R24 C47
2 or 5
5 or 2
R28 (0 Jumper)
R18 (0 Jumper)
3 or 6
4 or 1*
R16 (0 Jumper) FDG6303N R17 (0 Jumper)
Selects current set by R21
Selects current set by R20
Vd = 3 Volt
Figure 26. LNA Bypass Circuit Control on Small Test Board.
For product information and a complete list of Agilent contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5988-4553EN November 22, 2004 5989-1807EN


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